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| BAR 64... Silicon PIN Diode l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type BAR 64 BAR 64-04 BAR 64-05 BAR 64-06 Marking POs PPs PRs PSs Ordering code (tape and reel) Q62702-A1041 Q62702-A1010 Q62702-A1042 Q62702-A1043 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings per diode Parameter Reverse voltage Forward current Total Power dissipation TS 90C BAR64-04,-05,-06 TS 65C Junction temperature Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR64 BAR64-04,-05,-06 1) Symbol BAR 64 200 100 250 250 150 -55 +150C -55...+150C Unit V mA mW C C C VR IF Ptot Tj Top Tstg Rth JA 320 500 K/W Junction-soldering point BAR64 BAR64-04,-05,-06 Rth JS 240 340 _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23.02.95 BAR 64... Electrical characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics per diode Breakdown voltage IR = 5 A Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 200 0.23 12.5 2.1 0.85 1.55 1.4 - V V 1.1 pF 0.35 -20 3.8 1.35 s nH VF CT rf L Ls Forward current rF= f (TS;TA*) BAR64 * mounted on alumina Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06 mA mA TS IF I TS TA F TA TS TA TS TA Semiconductor Group 2 Edition A01, 23.02.95 BAR 64... Permissible pulse load RthJS = f (tp) BAR64 Permissible pulse load Ifmax/If DC=f(tp) BAR64 K/W Permissible pulse load RthJS= f (tp) BAR64-04,-05,-06 K/W Permissible pulse load IFmax/IFDC = f (tp) BAR64-04,-05,-06 Semiconductor Group 3 Edition A01, 23.02.95 BAR 64... Forward current IF=f(VF) Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Semiconductor Group 4 Edition A01, 23.02.95 |
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